? AUIRF7207Q 1 2015-11-16 absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicat ed in the specifications is not implied. exposure to absolute- maximum-rated conditions for extended periods may affect device reliability. the ther mal resistance and power dissipation ratin gs are measured under board mounted and still air conditions. ambient temperat ure (ta) is 25c, unless otherwise specified. automotive grade v dss -20v r ds(on) max 0.06? i d -5.4a parameter max. units v ds drain-to-source voltage -20 v i d @ t a = 25c continuous drain current, v gs @ -10v -5.4 a i d @ t a = 70c continuous drain current, v gs @ -10v -4.3 i dm pulsed drain current ? -43 p d @t a = 25c power dissipation 2.5 w p d @t a = 70c power dissipation 1.6 linear derating factor 0.02 w/c v gs gate-to-source voltage 12 v v gsm gate-to-source voltage single pulse tp<10s -16 v e as single pulse avalanche energy (thermally limited) ? 140 mj t j operating junction and -55 to + 150 c ? t stg storage temperature range ? so-8 top view 8 1 2 3 4 5 6 7 d d d g s a d s s ? features ? ? ? advanced process technology ? ? low on-resistance ? ? logic level gate drive ? ? p-channel mosfet ? ? dynamic dv/dt rating ? ? 150c operating temperature ? ? fast switching ? ? fully avalanche rated ? ? lead-free, rohs compliant ? ? automotive qualified* description specifically designed for automotive applications, this cellular design of hexfet? power mosfets util izes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfet s are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. thermal resistance symbol parameter typ. max. units r ? ja junction-to-ambient ? ??? 50 c/w base part number package type standard pack orderable part number form quantity AUIRF7207Q so-8 tape and reel 2500 AUIRF7207Qtr hexfet ? power mosfet hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com
? AUIRF7207Q 2 2015-11-16 static electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -20 ??? ??? v v gs = 0v, i d = -250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? -0.011 ??? v/c reference to 25c, i d = -1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.06 ?? v gs = -4.5v, i d = -5.4a ? ??? ??? 0.125 v gs = -2.7v, i d = -2.7a ? v gs(th) gate threshold voltage -0.7 ??? -1.6 v v ds = v gs , i d = -250a gfs forward transconductance 8.3 ??? ??? s v ds = -10v, i d = -5.4a i dss drain-to-source leakage current ??? ??? -1.0 a v ds = -16v, v gs = 0v ??? ??? -25 v ds = -16v, v gs = 0v, t j = 125c i gss gate-to-source forw ard leakage ??? ??? -100 na v gs = 12v gate-to-source reverse leakage ??? ??? 100 v gs = -12v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) ? symbol parameter min. typ. max. units conditions q g total gate charge ??? 15 22 nc i d = -5.4a q gs gate-to-source c harge ??? 2.2 3.3 v ds = -10v q gd gate-to-drain ("miller" ) charge ??? 5.7 8.6 v gs = -4.5v t d(on) turn-on delay time ??? 11 ??? ns v dd = -10v t r rise time ??? 24 ??? i d = -1.0a t d(off) turn-off delay time ??? 43 ??? r g = 6.0 ? t f fall time ??? 41 ??? r d = 10 ? c iss input capacitance ??? 780 ??? pf v gs = 0v c oss output capacitance ??? 410 ??? v ds = -15v c rss reverse transfer capacitance ??? 200 ??? ? = 1.0 mhz diode characteristics ??? ? symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? -3.1 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? -43 a integral reverse (body diode) ? p-n junction diode. v sd diode forward voltage ??? ??? -1.0 v t j = 25c, i s = -3.1a, v gs = 0v ? dv/dt peak diode recovery ? ??? 5.0 ??? v/ns t j = 175c, i s = -3.1a, v ds = -20v t rr ? reverse recovery time ??? 42 63 ns t j = 25c, i f = -3.1a q rr reverse recovery charge ??? 50 75 nc di/dt = 100a/s notes: ?? repetitive rating; pulse width limited by max. junction temperature. ?? starting t j = 25c, l = 9.6mh, r g = 25 ? , i as = -5.4a. ?? i sd ? -5.4a, di/dt ? -79a/s, v dd ? v (br)dss , t j ? 150c. ?? pulse width ? 300s; duty cycle ? 2%. ?? when mounted on 1 inch square copper board, t<10 sec.
? AUIRF7207Q 3 2015-11-16 fig. 2 typical output characteristics 1 10 100 0 400 800 1200 1600 - v , dr ain- to- sour ce voltag e ( v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c short ed gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss fig. 3 typical transfer characteristics 0 5 10 15 20 25 30 0 2 4 6 8 10 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for t est circuit see figure i = d 13 -5.4a v = -10v ds fig. 4 normalized on-resistance vs. temperature 1 10 100 2.0 3.0 4.0 5.0 6.0 v = -10v 20s pulse widt h ds - v , gate- to- sour ce voltag e ( v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j fig. 1 typical output characteristics fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage 1 10 100 0.1 1 10 20s pulse width t = 25 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v - v , dr ain- to- sour ce voltag e ( v) -i , drain-to-source current (a) ds d -2.25v 1 10 100 0.1 1 10 20s pulse width t = 150 c j top bottom vgs -7.00v -5.00v -4.50v -3.50v -3.00v -2.70v -2.50v -2.25v - v , dr ain- to- sour ce voltag e ( v) -i , drain-to-source current (a) ds d -2.25v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , juncti on temper atur e ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -5.4a
? AUIRF7207Q 4 2015-11-16 ? 25 50 75 100 125 150 0 100 200 300 400 star ti ng t , juncti on temper atur e ( c) e , single pulse avalanche energy (mj) j as i d top bottom -2.4a -4.3a -5.4a fig 8. maximum safe operating area fig 10. maximum avalanche energy vs. drain current 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 5.0 6.0 t , case temper atur e ( c) -i , drain current (a) c d fig. 7 typical source-to-drain diode forward voltage fig 9. maximum drain current vs. case temperature 0.1 1 10 100 0.4 0.6 0.7 0.9 1.1 1.2 1.4 -v ,source-to-drai n voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 1 10 100 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j a - v , dr ain- to- sour ce voltag e ( v) -i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms fig 13. maximum effective transient thermal impedance, junction-to-case 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectang ul ar pul se dur ati on ( sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? AUIRF7207Q 5 2015-11-16 ? fig 14. peak diode recovery dv/dt test circuit for p-channel hexfet? power mosfets fig 14a. unclamped inductive test circuit fig 14b. unclamped inductive waveforms fig 15a. switching time test circuit fig 15b. switching time waveforms fig 16a. gate charge test circuit fig 16b. gate charge waveform
? AUIRF7207Q 6 2015-11-16 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ fo o tprin t 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. notes: 1. d im en sio n in g & to leran c in g per asm e y14.5m -1994. 2. controlling dim ension: m illim eter 3. dim ensions are shown in m illim eters [inches]. 5 dim ension does not include m old protrusions. 6 dim ension does not include m old protrusions. m o ld pro tru sio n s n o t to exc eed 0.25 [.010]. 7 dim ension is the length of lead for soldering to a su bstrate. m o ld pro tru sio n s n o t to exc eed 0.15 [.006]. 8x 1.78 [.070] e1 d e y b a a1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 basic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 min max millimeters in c h es min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 43 12 so-8 package outline dimensions are shown in millimeters (inches) so-8 part marking
? AUIRF7207Q 7 2015-11-16 so-8 tape and reel dimensions are shown in millimeters (inches) 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? AUIRF7207Q 8 2015-11-16 qualification information ? qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification le vel is granted by extension of the higher automotive level. moisture sensitivity level so-8 msl1 esd machine model class m1b (+/- 100v) ? aec-q101-002 human body model class h1a (+/- 500v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes ? highest passing voltage. published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 4/3/2014 ? added "logic level gate drive" bull et in the features section on page 1 11/16/2015 ? updated datasheet with corporate template ? corrected ordering table on page 1.
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